We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated
Polarization Effects in Wavelength Converters based on Semiconductor Optical Amplifier
The possibility of applying a polarization-insensitive quantum-dot (QD) semiconductor optical amplif...
An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor laser...
Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantu...
The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-i...
The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-c...
The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-c...
In this paper, polarization dependence of patterning effects in quantum well semiconductor optical a...
International audienceSemiconductor Optical Amplifiers (SOAs) are of central interest as multifoncti...
International audienceSemiconductor Optical Amplifiers (SOAs) are of central interest as multifoncti...
International audienceSemiconductor Optical Amplifiers (SOAs) are of central interest as multifoncti...
We correlated experimental results with theoretical estimations of the dielectric function ε(ω) in t...
A polarization insensitive optical amplifier based on a lattice matched InGaAs/InGaAsP/InP multiple ...
We present an analytical technique for determining polarization-dependent optical transition matrix ...
The polarization dependence of gain dynamics in a bulk semiconductor optical amplifier has been inve...
Polarization Effects in Wavelength Converters based on Semiconductor Optical Amplifier
The possibility of applying a polarization-insensitive quantum-dot (QD) semiconductor optical amplif...
An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor laser...
Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantu...
The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-i...
The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-c...
The role of coupling between two quantum wells in TE optical modal gainis analysed within the self-c...
In this paper, polarization dependence of patterning effects in quantum well semiconductor optical a...
International audienceSemiconductor Optical Amplifiers (SOAs) are of central interest as multifoncti...
International audienceSemiconductor Optical Amplifiers (SOAs) are of central interest as multifoncti...
International audienceSemiconductor Optical Amplifiers (SOAs) are of central interest as multifoncti...
We correlated experimental results with theoretical estimations of the dielectric function ε(ω) in t...
A polarization insensitive optical amplifier based on a lattice matched InGaAs/InGaAsP/InP multiple ...
We present an analytical technique for determining polarization-dependent optical transition matrix ...
The polarization dependence of gain dynamics in a bulk semiconductor optical amplifier has been inve...
Polarization Effects in Wavelength Converters based on Semiconductor Optical Amplifier
The possibility of applying a polarization-insensitive quantum-dot (QD) semiconductor optical amplif...
An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor laser...