Pt‐Au multilayers deposited on a Si substrate were profiled with 2.5, 5, and 8 keV Ar+ ions in order to gain information on the influence of atomic mixing on secondary‐ion‐mass‐spectrometry depth resolution. Collisional mixing and thermal spike mixing of metallic interfaces have been calculated with no adjustable parameters. The collisional mixing is calculated by Monte Carlo simulation and the thermal spike model based on well‐established solid‐state models is used to describe the late phase of the cascade. Experimentally observed broadening of the Au/Pt and Pt/Au interfaces as a function of primary‐ion energy is predicted by the model. The experimental and calculated decay lengths of the trailing edge in Au are greater than in Pt by a fac...
Swift heavy ions of Au at 120 MeV are irradiated at the interface of Si/Me/Si (Me=V,Fe,Co) and the b...
The changes in behaviour of mixing at the interface of Si/Me/Si (Me = V, Fe, Co) due to irradiation ...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures h...
The ion beam induced mixing of Au/Pt and Pt/Au multilayers in SIMS sputter depth profiling with 2.5,...
Mixing of a thin Au layer in Pt and in reversed conditions mixing of a thin Pt layer in Au due to bo...
We have studied the mixing of a bilayer sample interface. The AuPt bilayer was sectioned in a SIMS a...
Pt/C multilayers of nanometric dimension have been irradiated with 2-MeV-Au ions to a fluence of 1&#...
There has been a great deal of interest in the fabrication of new materials with unique properties u...
In this work, we report the study of swift heavy ion-induced mixing at the interface of an a-Si/Nb/ ...
This article focuses on the influence of chemical driving forces on the mixing and phase formation t...
Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sect...
Ion beam mixing during 750 keV Kr+ irradiation at 80 K was measured on a series of Ag‐Pd alloys usin...
Swift heavy ions of Au at 120 MeV are irradiated at the interface of Si/Me/Si (Me=V,Fe,Co) and the b...
The mixing of Au in Si induced by secondary and high-order recoil implantation was investigated usin...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures...
Swift heavy ions of Au at 120 MeV are irradiated at the interface of Si/Me/Si (Me=V,Fe,Co) and the b...
The changes in behaviour of mixing at the interface of Si/Me/Si (Me = V, Fe, Co) due to irradiation ...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures h...
The ion beam induced mixing of Au/Pt and Pt/Au multilayers in SIMS sputter depth profiling with 2.5,...
Mixing of a thin Au layer in Pt and in reversed conditions mixing of a thin Pt layer in Au due to bo...
We have studied the mixing of a bilayer sample interface. The AuPt bilayer was sectioned in a SIMS a...
Pt/C multilayers of nanometric dimension have been irradiated with 2-MeV-Au ions to a fluence of 1&#...
There has been a great deal of interest in the fabrication of new materials with unique properties u...
In this work, we report the study of swift heavy ion-induced mixing at the interface of an a-Si/Nb/ ...
This article focuses on the influence of chemical driving forces on the mixing and phase formation t...
Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sect...
Ion beam mixing during 750 keV Kr+ irradiation at 80 K was measured on a series of Ag‐Pd alloys usin...
Swift heavy ions of Au at 120 MeV are irradiated at the interface of Si/Me/Si (Me=V,Fe,Co) and the b...
The mixing of Au in Si induced by secondary and high-order recoil implantation was investigated usin...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures...
Swift heavy ions of Au at 120 MeV are irradiated at the interface of Si/Me/Si (Me=V,Fe,Co) and the b...
The changes in behaviour of mixing at the interface of Si/Me/Si (Me = V, Fe, Co) due to irradiation ...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures h...