Add to ORKGThe use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor ...
This paper presents theoretical and experimental results concerning resistance of contact metal as a...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
In this work we show that an accurate and straightforward extraction of the contact resistivity from...
The authors report values of contact resistivity for silicon/silicide interfaces, derived by applyin...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
This article reports on the characterization of two- and three-layer ohmic contacts comprising of ti...
Metal to semiconductor contacts can be divided into two groups: rectifying contacts and non-rectifyi...
Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex pr...
Silicon (Si)-encapsulated III-V compound (III-V) device layers enable Si-complementary metal-oxide s...
The performance of Si integrated circuits depends on the transistor drive current. The drive current...
Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/...
Abstract — We propose and demonstrate a novel test struc-ture to characterize the electrical propert...
A technique for determining local silicon resistivity from the measured spreading resistance associa...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor ...
This paper presents theoretical and experimental results concerning resistance of contact metal as a...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
In this work we show that an accurate and straightforward extraction of the contact resistivity from...
The authors report values of contact resistivity for silicon/silicide interfaces, derived by applyin...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
This article reports on the characterization of two- and three-layer ohmic contacts comprising of ti...
Metal to semiconductor contacts can be divided into two groups: rectifying contacts and non-rectifyi...
Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex pr...
Silicon (Si)-encapsulated III-V compound (III-V) device layers enable Si-complementary metal-oxide s...
The performance of Si integrated circuits depends on the transistor drive current. The drive current...
Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/...
Abstract — We propose and demonstrate a novel test struc-ture to characterize the electrical propert...
A technique for determining local silicon resistivity from the measured spreading resistance associa...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor ...
This paper presents theoretical and experimental results concerning resistance of contact metal as a...