GaAs/InAs heterostructures grown by Atomic Layer Epitaxy
- Ahopelto, J.
- Kattelus, H. P.
- Saarilahti, J.
- Suni, I.
Publication date
January 1989
DOI Publisher
IEEE Institute of Electrical and Electronic EngineersAbstract
Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.</p
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