Rapid thermal annealing of SI_1-x GE_x layers formed by germanium ion implantation

(100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS