Self-Actuation Tests of Ohmic Contact and Capacitive RF-MEMS Switches for Wideband RF Power Limiter Circuits

This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin=24-31 dBm with Vbias=0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuit