Electroluminescence (EL) of porous silicon (PS) samples was studied at anodic polarisation using neutral electrolyte contact. SEM and AFM morphology study of PS revealed its complex structure comprising features with micrometre and tens of nanometre dimensions. The observed features of EL, including its degradation during anodisation, were discussed in terms of a phenomenological model of a chemically modified silicon surface. The adsorption of polyelectrolytes polyallylamine (PAA) and polysterylsulphonate (PSS) demonstrated sufficient improvement of EL stability. The effect of adsorption of protein bovine serum albumin (BSA) on EL quenching was studied
In this work, porous silicon (PS) films with varied porosity (68–82%) were formed on the p-type, bor...
Electrochemical anodization in the transition regime, between porous silicon formation region and el...
Title: Porous silicon-based optical sensors of chemical species for gas phase Author: Bc. Jiří Liška...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
Light‐emitting porous silicon films have been obtained by anodic etching p‐type Si samples in a HF‐e...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
Light\u2010emitting porous silicon films have been obtained by anodic etching p\u2010type Si samples...
Light-emitting porous silicon films have been obtained by anodic etching p-type Si samples in a HF-e...
We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. ...
The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. ...
Spectral shifts of visible electroluminescence (EL) from cathodically biased n-Si in electrolyte sol...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
Porous silicon is a very attractive material due to its intense visible photoluminescence at room te...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
Electrochemical investigations were conducted of the effect of potential on the luminescence of poro...
In this work, porous silicon (PS) films with varied porosity (68–82%) were formed on the p-type, bor...
Electrochemical anodization in the transition regime, between porous silicon formation region and el...
Title: Porous silicon-based optical sensors of chemical species for gas phase Author: Bc. Jiří Liška...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
Light‐emitting porous silicon films have been obtained by anodic etching p‐type Si samples in a HF‐e...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
Light\u2010emitting porous silicon films have been obtained by anodic etching p\u2010type Si samples...
Light-emitting porous silicon films have been obtained by anodic etching p-type Si samples in a HF-e...
We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. ...
The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. ...
Spectral shifts of visible electroluminescence (EL) from cathodically biased n-Si in electrolyte sol...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
Porous silicon is a very attractive material due to its intense visible photoluminescence at room te...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
Electrochemical investigations were conducted of the effect of potential on the luminescence of poro...
In this work, porous silicon (PS) films with varied porosity (68–82%) were formed on the p-type, bor...
Electrochemical anodization in the transition regime, between porous silicon formation region and el...
Title: Porous silicon-based optical sensors of chemical species for gas phase Author: Bc. Jiří Liška...