Thin-film GaN HEMTs for flexible electronics

As the demand for faster, more efficient, and more robust electronics continues to grow, new materials beyond silicon need to be explored. In the field of power electronics, gallium nitride (GaN) is a strong candidate for next-generation devices due to its wide bandgap (3.4 eV), high electron mobility (>1500 cm2/V-s), and large electron sheet concentration (1013 cm-2). These properties enable high-performance devices that are mechanically and electrically stable in harsh conditions such as high temperatures or extreme bending. Due to the prohibitive cost of free-standing GaN, GaN wafers are typically created through epitaxial growth on sapphire, silicon carbide, or Si (111) substrates; through substrate removal processes, the