147 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.A three-dimensional HPEM is employed to examine the consequences of asymmetric excitation due to the transmission line effects and irregular sputter tracks on species densities and fluxes. It was found that for typical conditions for Al IMPVD the metal species have improved symmetry due to charge exchange reactions and subsequent diffusion. The symmetry and uniformity of the metal species above the wafer significantly improve when increasing the aspect ratio of the plasma region or increasing the pressure, accompanied by a decrease in the magnitude of metal fluxes. Irregular sputter tracks act as asymmetric sources and cause asymmetries in the sputtered metal species and...
In this paper we describe the implementation of Plasma Enhanced CVD (PECVD) models. We show numerica...
The conformality of thin metal films (liners) formed on high-aspect-ratio trench structures in ioniz...
With the progression towards higher aspect ratios and finer topographical dimensions in many micro- ...
147 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.A three-dimensional HPEM is e...
In the semiconductor industry the number of devices per die increases and the critical dimension dec...
Abstract—Ionized physical vapor deposition (IPVD) is a new method for depositing metal into high-asp...
137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Ionized metal physical vapor ...
A physically based model for full three-dimensional(3D)feature-scale simulation of ionized metal pla...
We present a computational study of processes taking place in a sheath region formed near a negative...
288 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.Third, a computer simulation ...
174 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.In this thesis, two-dimension...
For plasma-assisted atomic layer deposition (ALD), reaching conformal deposition in high aspect rati...
As the critical dimension of the semiconductor device continues to shrink and aspect ratio continues...
152 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Asymmetric antennas (m = +1,-...
The work presented in this thesis involves experimental and theoretical studies related to a thin fi...
In this paper we describe the implementation of Plasma Enhanced CVD (PECVD) models. We show numerica...
The conformality of thin metal films (liners) formed on high-aspect-ratio trench structures in ioniz...
With the progression towards higher aspect ratios and finer topographical dimensions in many micro- ...
147 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.A three-dimensional HPEM is e...
In the semiconductor industry the number of devices per die increases and the critical dimension dec...
Abstract—Ionized physical vapor deposition (IPVD) is a new method for depositing metal into high-asp...
137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Ionized metal physical vapor ...
A physically based model for full three-dimensional(3D)feature-scale simulation of ionized metal pla...
We present a computational study of processes taking place in a sheath region formed near a negative...
288 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.Third, a computer simulation ...
174 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.In this thesis, two-dimension...
For plasma-assisted atomic layer deposition (ALD), reaching conformal deposition in high aspect rati...
As the critical dimension of the semiconductor device continues to shrink and aspect ratio continues...
152 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Asymmetric antennas (m = +1,-...
The work presented in this thesis involves experimental and theoretical studies related to a thin fi...
In this paper we describe the implementation of Plasma Enhanced CVD (PECVD) models. We show numerica...
The conformality of thin metal films (liners) formed on high-aspect-ratio trench structures in ioniz...
With the progression towards higher aspect ratios and finer topographical dimensions in many micro- ...