Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices

188 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.Various ohmic contact schemes on p-type GaN, n-type GaN and AlGaN, as well as Schottky contacts on GaN and AlGaN were studied using a wide range of electrical and materials characterization techniques. Band gap engineering and purely process-oriented techniques such as annealing, wet and dry etching were used to improve the electrical characteristics of these contacts. Materials analyses were used to understand the evolution of electrical behavior of these contacts at higher temperatures.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD