67 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The magneto-transport method is a technique that allows the simultaneous measurement of the minority electron mobility in the base of the HBT and the dc current gain of the device. The minority electron lifetime can be determined using these two measurements. Therefore, this technique is very valuable for its ability to characterize the quality of the base material in terms of the minority electron's mobility and lifetime. In this dissertation, results performed using the magneto-transport method are used to study the electron mobility and lifetime in HBTs.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
The base current density J(B) is an important parameter in determining the common-emitter current ga...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
67 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The magneto-transport method i...
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is d...
Electron transport across the base of InP/InGaAs heterojunction bipolar transistors is examined by M...
Abstract—Temperature-dependent minority electron mo-bilities in p-type SiGe have been measured for t...
A theoretical toolbox for the simulation of Heterojunction Bipolar Transistors (HBTs), including the...
This work describes the modeling of carrier transport in heterojunction bipolar transistors (HBT\u27...
Modeling and analysis of microwave characteristics of HBTs have been performed. The physics-based mo...
This thesis describes experimental and theoretical studies of the physics governing heterojunction b...
It is worthwhile noting the relevant role played by several electronic transport coefficients in the...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN012760 / BLDSC - British Library D...
International audienceCarrier mobility in a semiconductor is one of the most important parameters fo...
The base current density J(B) is an important parameter in determining the common-emitter current ga...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
67 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The magneto-transport method i...
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is d...
Electron transport across the base of InP/InGaAs heterojunction bipolar transistors is examined by M...
Abstract—Temperature-dependent minority electron mo-bilities in p-type SiGe have been measured for t...
A theoretical toolbox for the simulation of Heterojunction Bipolar Transistors (HBTs), including the...
This work describes the modeling of carrier transport in heterojunction bipolar transistors (HBT\u27...
Modeling and analysis of microwave characteristics of HBTs have been performed. The physics-based mo...
This thesis describes experimental and theoretical studies of the physics governing heterojunction b...
It is worthwhile noting the relevant role played by several electronic transport coefficients in the...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN012760 / BLDSC - British Library D...
International audienceCarrier mobility in a semiconductor is one of the most important parameters fo...
The base current density J(B) is an important parameter in determining the common-emitter current ga...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...