Strained-Layer Indium Gallium Arsenide-Gallium Arsenide-Aluminum Galium Arsenide Photonic Devices by Metalorganic Chemical Vapor Deposition

138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD