Add to ORKG48 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Long channel transistors using both platinum and erbium silicide are fabricated and their performance compared. Processing issues, including erbium's reactivity with oxide and tendency to creep, and how they affect the NMOS performance, are discussed.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
Silicide engineering for high-performance CMOS logic devices is challenged by aggressive scaling of ...
In this paper we present results of transmission electron microscopy observation of the formation pr...
Crystalline silicon was doped with erbium by ion implantation method at room temperature. The implan...
48 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Long channel transistors using...
For ideal scaling, per generation (~3 years), a O.7x reduction in Metal Oxide Semiconductor Field Ef...
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source...
The continuous miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) experi...
We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation durin...
Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Sch...
Platinum, iridium and erbium silicides have been widely applied in the semiconductor devices as ohmi...
The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substr...
The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substr...
A current drivability improvement of MISFETs is necessary for the performance enhancement of CMOS ci...
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been f...
In this paper, a Schottky barrier polycrystalline silicon thin-film transistor (SB TFT) with erbium ...
Silicide engineering for high-performance CMOS logic devices is challenged by aggressive scaling of ...
In this paper we present results of transmission electron microscopy observation of the formation pr...
Crystalline silicon was doped with erbium by ion implantation method at room temperature. The implan...
48 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Long channel transistors using...
For ideal scaling, per generation (~3 years), a O.7x reduction in Metal Oxide Semiconductor Field Ef...
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source...
The continuous miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) experi...
We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation durin...
Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Sch...
Platinum, iridium and erbium silicides have been widely applied in the semiconductor devices as ohmi...
The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substr...
The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substr...
A current drivability improvement of MISFETs is necessary for the performance enhancement of CMOS ci...
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been f...
In this paper, a Schottky barrier polycrystalline silicon thin-film transistor (SB TFT) with erbium ...
Silicide engineering for high-performance CMOS logic devices is challenged by aggressive scaling of ...
In this paper we present results of transmission electron microscopy observation of the formation pr...
Crystalline silicon was doped with erbium by ion implantation method at room temperature. The implan...