Add to ORKG95 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.The high-performance GaAs MESFETs will provide a solution to low-cost NMCs, and the circuit results justify the readiness of this technology in Ka-band and V-band applications. The low operation-voltage switches will facilitate the direct integration with current MMICs and provide a solution to broadband reconfigurable circuits. The mature GaAs MESFET technology integrated with RF MEM switches will have a direct impact on RF circuit applications in the future.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
The object of the work described in this thesis was to develop GaAs integrated circuit modeling tech...
In this study, the authors present the designs and experimental results of radio frequency (RF) micr...
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed a...
95 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.The high-performance GaAs MESF...
69 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The world of high-frequency el...
We present novel RF switches using micro-electro-mechanical (MEM) technology. These MEM switches are...
121 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.Direct ion-implanted GaAs MES...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
112 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1996.Speed, noise and gain measure...
Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractiv...
ABSTRACT-We demonstrate a sub-lovolts RF MEM switch built on a semi-insulating GaAs substrate. The f...
92 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.Speed and gain measurements ar...
The purpose of the work described in this thesis was to study the use of GaAs MESFETs in digital log...
The availability of high quality semi-insulating GaAs substrates is essential to the development of ...
126 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.This dissertation summarizes ...
The object of the work described in this thesis was to develop GaAs integrated circuit modeling tech...
In this study, the authors present the designs and experimental results of radio frequency (RF) micr...
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed a...
95 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.The high-performance GaAs MESF...
69 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The world of high-frequency el...
We present novel RF switches using micro-electro-mechanical (MEM) technology. These MEM switches are...
121 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.Direct ion-implanted GaAs MES...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
112 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1996.Speed, noise and gain measure...
Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractiv...
ABSTRACT-We demonstrate a sub-lovolts RF MEM switch built on a semi-insulating GaAs substrate. The f...
92 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.Speed and gain measurements ar...
The purpose of the work described in this thesis was to study the use of GaAs MESFETs in digital log...
The availability of high quality semi-insulating GaAs substrates is essential to the development of ...
126 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.This dissertation summarizes ...
The object of the work described in this thesis was to develop GaAs integrated circuit modeling tech...
In this study, the authors present the designs and experimental results of radio frequency (RF) micr...
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed a...