Temperature is a key factor in determining the output stability of lasers. The performance of lasers tends to deteriorate with increasing temperature: the laser threshold increases while the efficiency decreases. In the current work, the temperature dependence of laser output power as a function of temperature and bias current is studied. Standard 850 nm and GaAs lasers with AlGaAs claddings and custom thermoelectric cooler modules are used to demonstrate the desired measurements.unpublishednot peer reviewedU of I OnlyUndergraduate senior thesis not recommended for open acces
Abstract—The temperature dependence of threshold current th in vertical-cavity surface-emitting lase...
Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networ...
A thermoreflectance technique is used to evaluate the temperature variations at the output facet of ...
The loss α, governing the threshold current in GaAs laser diodes is attributed to absorptive transit...
Downloaded Fprovide an assessment of the thermal behavior of the power modulation from a laser diode...
Downloaded Fprovide an assessment of the thermal behavior of the power modulation from a laser diode...
Abstract—We analyze the temperature sensitivity of 1.5-µm GaInNAsSb lasers grown on GaAs. Building o...
We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...
In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
Abstract—Characteristic temperature coefficients of the threshold current ( 0) and the external diff...
Optical power transmission efficiency is maximized by optimal match of laser wavelength and bandgap ...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
Vertical Cavity Surface Emitting Lasers (VCSELs) are semiconductor laser diodes with a wide variety ...
Abstract—The temperature dependence of threshold current th in vertical-cavity surface-emitting lase...
Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networ...
A thermoreflectance technique is used to evaluate the temperature variations at the output facet of ...
The loss α, governing the threshold current in GaAs laser diodes is attributed to absorptive transit...
Downloaded Fprovide an assessment of the thermal behavior of the power modulation from a laser diode...
Downloaded Fprovide an assessment of the thermal behavior of the power modulation from a laser diode...
Abstract—We analyze the temperature sensitivity of 1.5-µm GaInNAsSb lasers grown on GaAs. Building o...
We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...
In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
Abstract—Characteristic temperature coefficients of the threshold current ( 0) and the external diff...
Optical power transmission efficiency is maximized by optimal match of laser wavelength and bandgap ...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
Vertical Cavity Surface Emitting Lasers (VCSELs) are semiconductor laser diodes with a wide variety ...
Abstract—The temperature dependence of threshold current th in vertical-cavity surface-emitting lase...
Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networ...
A thermoreflectance technique is used to evaluate the temperature variations at the output facet of ...