Phase change materials, such as Ge2Sb2Te5 (GST), are used as the active recording media in current optical storage and upcoming solid state memories because of their remarkable properties. They can be rapidly and reversibly transformed between the amorphous and crystalline phases, and they exhibit large contrast in the optical and electrical properties between the two phases, which allows us to define bits of information. Understanding the structure of the amorphous phase is important in the development of phase change memory technologies, because nucleation, the first stage of crystallization, is dependent on the amorphous structure. In this dissertation, we first analyze the evolution of subcritical nuclei and the nucleation kinetics...
Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated ...
Laser-induced crystalline-amorphous phase change of Ge-Sb-Te alloys is the key mechanism enabling th...
As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductor...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.One long standing puzzle was ...
Phase change memory devices are based on the rapid and reversible amorphous to crystalline transfor...
The nanoscale order in amorphous GeTe thin films is measured using fluctuation transmission electron...
Phase-change materials are of immense importance for optical recording and computer memory, but the ...
International audienceGe-rich Ge–Sb–Te alloys are materials with potential for new non-volatile memo...
In this thesis we have studied the crystallization behavior of amorphous samples at different scales...
Phase-change memory is a promising candidate for the next generation of non-volatile memory devices....
This is the author accepted manuscript. The final version is available from Wiley via the DOI in thi...
International audienceAmong the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and ...
As an aid toward a better understanding of data retention of phase change memories we have analyzed ...
International audienceAmong the phase change materials, Ge-rich GeSbTe (GST) alloys are of considera...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated ...
Laser-induced crystalline-amorphous phase change of Ge-Sb-Te alloys is the key mechanism enabling th...
As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductor...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.One long standing puzzle was ...
Phase change memory devices are based on the rapid and reversible amorphous to crystalline transfor...
The nanoscale order in amorphous GeTe thin films is measured using fluctuation transmission electron...
Phase-change materials are of immense importance for optical recording and computer memory, but the ...
International audienceGe-rich Ge–Sb–Te alloys are materials with potential for new non-volatile memo...
In this thesis we have studied the crystallization behavior of amorphous samples at different scales...
Phase-change memory is a promising candidate for the next generation of non-volatile memory devices....
This is the author accepted manuscript. The final version is available from Wiley via the DOI in thi...
International audienceAmong the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and ...
As an aid toward a better understanding of data retention of phase change memories we have analyzed ...
International audienceAmong the phase change materials, Ge-rich GeSbTe (GST) alloys are of considera...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated ...
Laser-induced crystalline-amorphous phase change of Ge-Sb-Te alloys is the key mechanism enabling th...
As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductor...