Electron-phonon interactions in double layer graphene superfluids

As the scaling of electronic devices continues to decrease, the search for a low- power replacement for complementary metal-oxide semiconductor (CMOS) logic becomes increasingly important. A predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate of excitons in double layer graphene has potential for use in ultra-low power device applications. These devices operate based on coherent interlayer transport and could far outperform traditional CMOS devices both in switching speed and power efficiency. When examining the possibility of a room-temperature exciton condensate, it is important to consider the scattering of charge carriers by phonons in each of the constituent graphene monolayers. We use the non- equilibrium Green’s function (NEGF) formalism to examine the effect that carrier-phonon scattering has on transport in such a device. The simulations show that the effect of carrier-phonon scattering has a strong dependence on the device coherence length, the maximum distance that individual electrons or holes may travel into the gapped superfluid region