Data are presented on various laser and optical devices that utilize native oxidation of Al bearing III-V semiconductors to effect large lateral index steps. These large index steps are due to the low refractive index of the Al bearing native oxide (n $\sim$ 1.5), making possible the fabrication of high-quality optical waveguides.To process epitaxial III-V crystals at higher resolution (e.g., laser devices with small output apertures and lower threshold currents), it is often desirable to shrink the thickness of the upper confining layer (UCL). The effect of thin upper confining layers on laser performance is studied by reducing the thickness to 0.2, 0.3, 0.45, and 0.6 $\mu$m. Data presented show that device performance is not significantly...
Data are presented showing that "deep," device-quality native oxide structures can be formed in sele...
We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with sel...
Data are presented showing that "deep," device-quality native oxide structures can be formed in sele...
Data are presented on various laser and optical devices that utilize native oxidation of Al bearing ...
108 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.In these experiments, water v...
108 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.In these experiments, water v...
In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high qua...
In the present work, a water vapor oxidation process is used to convert high Al-composition $\rm Al\...
In the present work, a water vapor oxidation process is used to convert high Al-composition $\rm Al\...
In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabri...
In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabri...
In this work, a water vapor oxidation process is used to convert high Al composition $\rm Al\sb{x}Ga...
In this work, a water vapor oxidation process is used to convert high Al composition $\rm Al\sb{x}Ga...
We report highly efficient, low-threshold-current edge-emitting lasers where both the optical wavegu...
We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation t...
Data are presented showing that "deep," device-quality native oxide structures can be formed in sele...
We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with sel...
Data are presented showing that "deep," device-quality native oxide structures can be formed in sele...
Data are presented on various laser and optical devices that utilize native oxidation of Al bearing ...
108 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.In these experiments, water v...
108 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.In these experiments, water v...
In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high qua...
In the present work, a water vapor oxidation process is used to convert high Al-composition $\rm Al\...
In the present work, a water vapor oxidation process is used to convert high Al-composition $\rm Al\...
In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabri...
In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabri...
In this work, a water vapor oxidation process is used to convert high Al composition $\rm Al\sb{x}Ga...
In this work, a water vapor oxidation process is used to convert high Al composition $\rm Al\sb{x}Ga...
We report highly efficient, low-threshold-current edge-emitting lasers where both the optical wavegu...
We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation t...
Data are presented showing that "deep," device-quality native oxide structures can be formed in sele...
We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with sel...
Data are presented showing that "deep," device-quality native oxide structures can be formed in sele...