The ITRS (International Technology Roadmap for Semiconductors) has recommended that carbon-based transistors be given further study as a potential ???Beyond CMOS??? technology. Unlike traditional devices with a silicon channel, these transistors have channels made from semiconducting carbon nanomaterials in the form of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs). The research community has given specific attention to these two carbon allotropes because of their outstanding electrical properties, including high mobilities at room temperature, high current densities, and micron-scale mean free paths. Carbon nanomaterial transistors offer many opportunities for circuits and systems, but also present a number of challenges in terms ...
Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and are ideal mat...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...
The ITRS (International Technology Roadmap for Semiconductors) has recommended that carbon-based tra...
This thesis is a study on designing, understanding and performance benchmarking of FPGA (Field Progr...
Metal-oxide semiconductor field-effect transistor (MOSFET) scaling throughout the years has enabled ...
FPGAs (field programmable gate arrays) are attractive alternatives compared to ASICs (application-sp...
2011-10-04Carbon nanomaterials, one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graph...
This paper addresses at first carbon NanoTubes (CNTs) and importance of CNT over silicon based devic...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, ma...
Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a...
In this article, we present a graphical Computer-Aided Design (CAD) environment for the design, anal...
In this article, we present a graphical Computer-Aided Design (CAD) environment for the design, anal...
In this article, we present a graphical Computer-Aided Design (CAD) environment for the design, anal...
Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yield...
Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and are ideal mat...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...
The ITRS (International Technology Roadmap for Semiconductors) has recommended that carbon-based tra...
This thesis is a study on designing, understanding and performance benchmarking of FPGA (Field Progr...
Metal-oxide semiconductor field-effect transistor (MOSFET) scaling throughout the years has enabled ...
FPGAs (field programmable gate arrays) are attractive alternatives compared to ASICs (application-sp...
2011-10-04Carbon nanomaterials, one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graph...
This paper addresses at first carbon NanoTubes (CNTs) and importance of CNT over silicon based devic...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, ma...
Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a...
In this article, we present a graphical Computer-Aided Design (CAD) environment for the design, anal...
In this article, we present a graphical Computer-Aided Design (CAD) environment for the design, anal...
In this article, we present a graphical Computer-Aided Design (CAD) environment for the design, anal...
Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yield...
Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and are ideal mat...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...