???Unconventional structured semiconductors??? have novel structures that provide improved optical and electrical properties compared with the conventional crystalline semiconductors. Two kinds of semiconductors are discussed within this thesis: gallium nitride (GaN) and silicon (Si). A novel Pt-assisted electroless etching technique is used to produce porous GaN (PGaN), which is of particular interest for optoelectronics due to its large direct bandgap (3.4 eV). PGaN is also promising for use as a substrate for epitaxial growth and for chemical and biosensing. Several possible applications for PGaN have been explored. PGaN is able to be functionalized for use as a surface enhanced Raman spectroscopy (SERS) substrate by solution-based el...
A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching...
We investigated the correlation between structural and photoelectrochemical properties of GaN porous...
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current...
???Unconventional structured semiconductors??? have novel structures that provide improved optical a...
ii “Unconventional structured semiconductors ” have novel structures that provide improved optical a...
189 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.In addition to characterizati...
Gallium nitride (GaN) is a greatly promising wide band gap semiconductor with applications in high p...
LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been devel...
The III-Nitride materials system provides a fascinating platform for developing optoelectronic devic...
We investigated the structural features of gallium-nitride-porous structures formed using the photo-...
There has been a great deal of interest in developing relaxed InGaN pseudo-substrates for the fabric...
Energy has emerged to be a global concern as the world confronts the challenges of population growth...
Growth of indium gallium nitrite (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) on porous...
This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) su...
171 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.This thesis presents the fabr...
A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching...
We investigated the correlation between structural and photoelectrochemical properties of GaN porous...
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current...
???Unconventional structured semiconductors??? have novel structures that provide improved optical a...
ii “Unconventional structured semiconductors ” have novel structures that provide improved optical a...
189 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.In addition to characterizati...
Gallium nitride (GaN) is a greatly promising wide band gap semiconductor with applications in high p...
LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been devel...
The III-Nitride materials system provides a fascinating platform for developing optoelectronic devic...
We investigated the structural features of gallium-nitride-porous structures formed using the photo-...
There has been a great deal of interest in developing relaxed InGaN pseudo-substrates for the fabric...
Energy has emerged to be a global concern as the world confronts the challenges of population growth...
Growth of indium gallium nitrite (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) on porous...
This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) su...
171 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.This thesis presents the fabr...
A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching...
We investigated the correlation between structural and photoelectrochemical properties of GaN porous...
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current...