Preparation of ZnO by a nearby vaporizing chemical vapor deposition method

ArticleZnO films were prepared by a nearby vaporizing chemical vapor deposition (CVD) method using bis(2,4-pentanedionato)zinc as a source material. The deposition rate increased exponentially from 0.58 to 147 nm min-1 with increasing substrate temperature. The highest preferred orientation to c-axis was obtained under the conditions that the distance between substrate and source surface (D) was 5.0 mm and the substrate temperature (Ts) was 300 °C. When we used a sapphire (0001) substrate, an epitaxial ZnO film could be deposited on this condition.journal articl