反応性rfスパッタ法によるa-GaNxOy膜の光学的・電気的特性

The films which were prepared at room temperature by reactive rf sputtering of the target of gallium mental in an atmosphere of N2+Ar were found to show large variation in the absorption in the visible region of the spectrum. The optical gap energies of the films vary from 0.9eVto more than 4.0eV corresponding to the preparation condition of nitrogen pressure. Transmission electron diffraction study showed that the films were amorphous alloys composed og gallium, nitrogen and oxygen. Room temperature conductivities change from 10^-6 to 10^-10 ohm^-1 cm^-1. The temperature dependence of conductivities give activation energies of 0.5-0.8eV. Yellow photoluminescence was observed in films having wide optical gap energies. At present, these variations are believed to be caused by the changing in atomic ratio of gallium, nitrogen and oxygen the films, but further study is necessary to clarify the origin of these variations.departmental bulletin pape