CNT manipulation: inserting a carbonaceous dielectric layer beneath using electron beam induced deposition

Electron beam induced carbonaceous deposition has been carried out in the presence of water vapor at 0.4 torr pressure amidst residual hydrocarbons present in the SEM chamber. When performed at a CNT location on a Si substrate with low e beam energy (10 kV), the deposition was taking place beneath the CNT. While higher beam energy (25 kV) causing the deposition on the top surface of the CNT, in agreement with the earlier reports. The insertion of dielectric carbonaceous layer beneath the CNT allowed us to measure the I–V data along the length of the nanotube using CAFM