Theory for the potentiostatic absorbance transient for a species generated at the rough electrode/electrolyte interface is developed. Absorbance transients are strongly affected by electrode geometries, particularly the effect of electrode roughness which is the least understood area, is dealt here. A general operator structure between concentration, surface absorbance density, absorbance transients and arbitrary roughness profile of electrode is emphasized. The statistically averaged absorbance transients is obtained by ensemble averaging over all possible surface roughness configurations. An elegant mathematical formula between the average spectroelectrochemical absorbance transient and surface structure factor or power spectrum of roughn...
Department of Chemistry, University of Delhi, Delhi-110 007, India E-mail : rkant@chemistry.du.ac.i...
We develop a theory for cyclic staircase voltammetry (CSCV) of a reversible charge transfer process ...
We develop a theory for the electrical admittance of a rough interface under diffusion-limited and p...
A theoretical model for single potential step absorbance transient has been developed for the pseudo...
Theory is developed for the DPSC (double potential step chronoamperometry) response for finite fract...
A theoretical model is developed to quantify the effect of diffusion controlled adsorption of electr...
A theory is developed for diffusion-limited charge transfer on a non-fractally rough electrode. The ...
Theoretical model is developed for the voltammetric response of multistep reversible charge transfer...
We have developed a theory for an electrochemical way of measuring the statistical properties of a n...
We have developed a theory for an electrochemical way of measuring the statistical properties of a n...
We have generalized the Anson equation for chronocoulometry at deterministic and randomly rough elec...
A general theory for an arbitrary potential sweep voltammetry on an arbitrary topography of an elect...
The prediction of voltammetric response from the microscopic information of the electrode surface mo...
We experimentally validate theoretical relation between the roughness power spectrum (PS) and electr...
We analyze the problem of diffusion to irregular electrode whose irregularity is characterized as st...
Department of Chemistry, University of Delhi, Delhi-110 007, India E-mail : rkant@chemistry.du.ac.i...
We develop a theory for cyclic staircase voltammetry (CSCV) of a reversible charge transfer process ...
We develop a theory for the electrical admittance of a rough interface under diffusion-limited and p...
A theoretical model for single potential step absorbance transient has been developed for the pseudo...
Theory is developed for the DPSC (double potential step chronoamperometry) response for finite fract...
A theoretical model is developed to quantify the effect of diffusion controlled adsorption of electr...
A theory is developed for diffusion-limited charge transfer on a non-fractally rough electrode. The ...
Theoretical model is developed for the voltammetric response of multistep reversible charge transfer...
We have developed a theory for an electrochemical way of measuring the statistical properties of a n...
We have developed a theory for an electrochemical way of measuring the statistical properties of a n...
We have generalized the Anson equation for chronocoulometry at deterministic and randomly rough elec...
A general theory for an arbitrary potential sweep voltammetry on an arbitrary topography of an elect...
The prediction of voltammetric response from the microscopic information of the electrode surface mo...
We experimentally validate theoretical relation between the roughness power spectrum (PS) and electr...
We analyze the problem of diffusion to irregular electrode whose irregularity is characterized as st...
Department of Chemistry, University of Delhi, Delhi-110 007, India E-mail : rkant@chemistry.du.ac.i...
We develop a theory for cyclic staircase voltammetry (CSCV) of a reversible charge transfer process ...
We develop a theory for the electrical admittance of a rough interface under diffusion-limited and p...