Temperature dependence photo-luminescence of Nd<SUP>3+</SUP> doped PLZT ceramic

Temperature dependence of photo-luminescence for Nd<SUP>3+</SUP> doped PLZT(9/65/35) was measured across its structural phase transition temperature. The absorption corresponding to <SUP>4</SUP> I<SUB>9/2</SUB>→ <SUP>4</SUP> F<SUB>5/2</SUB>, <SUP>2</SUP> H<SUB>9/2</SUB> energy level near 808 nm was used for exciting the sample. The major emission bands at 0.9, 1.06, and 1.34 μ m were observed. No shift in the peak position of these emission bands was observed across the diffused structural transition with increase in temperature. However, a 10% increase in FWHM was observed. The absence of any discernible peak shift is attributed to the shielding of the intra-configurational 4f-4f transitions, in trivalent Nd<SUP>3+</SUP> ions, by external 5 s and 5d orbitals. The red shifted phonon side bands appeared with increase in temperature