Presented in this paper in the design and development of Millimetre-wave Gunn Oscillators for the 33-50 GHg and 75-110 GHz waveguide bande. 50-100mW CW output power hae been obtained in the 33-50 GHz band with commercially available packaged Gunn diode8 operating in a fundamental mode in a post-coupled waveguide oscillator circuit. Here than lO mW output ha8 been obtained over the frequency range 75-85 GHz with the Gunn diode operating in a harmonic extraction mode in a resonant-cap waveguide oecillator circuit. These oscillators, developed in connection with radio astronomy receivers, could provide a solid-state reliable alternative to the relatively expensive and short-lived klyetrone for local oscillator application in low-noise receiver...
The discovery in 1963, by JB Gunn, of instabilities in electronic samples of gallium arsenide has en...
Over the past decade, there have been substantial activities as well as changes in the design of hig...
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices...
Restricted Access.Presented in this paper in the design and development of Millimetre-wave Gunn Osci...
A Gunn waveguide-oscillator, mechanically tunable from 60 to 70 GHz, has been developed for use as a...
Restricted Access.A phase-locked Gunn Oscillator at 21 GHz for local oscillator application in a low...
Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz and 75–110 GHz freq...
Restricted Access.A W-band (75-110 GHz) Gunn oscillator realized with a resonant cap configuration i...
A phase-locked Gunn Oscillator at 21 GHz for local oscillator application in a low-noise radio astro...
94 GHz stable sources using 2nd harmonic GaAs Gunn diodes and injection locking at 47 GHz by a high ...
This thesis presents the design and implementation of a millimeter-wave Gunn diode oscillator operat...
A low cost and high performance Gunn X Band oscillators for educational and research purposes have b...
Subject of investigation: oscillators employing Gunn diodes for millimetric wave band. Purpose of th...
Recent advances in design and technology signifi- cantly improved the performance of low-noise InP ...
Abstract. The conventional technique of realising waveguide resonators for Gunn diode oscillators to...
The discovery in 1963, by JB Gunn, of instabilities in electronic samples of gallium arsenide has en...
Over the past decade, there have been substantial activities as well as changes in the design of hig...
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices...
Restricted Access.Presented in this paper in the design and development of Millimetre-wave Gunn Osci...
A Gunn waveguide-oscillator, mechanically tunable from 60 to 70 GHz, has been developed for use as a...
Restricted Access.A phase-locked Gunn Oscillator at 21 GHz for local oscillator application in a low...
Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz and 75–110 GHz freq...
Restricted Access.A W-band (75-110 GHz) Gunn oscillator realized with a resonant cap configuration i...
A phase-locked Gunn Oscillator at 21 GHz for local oscillator application in a low-noise radio astro...
94 GHz stable sources using 2nd harmonic GaAs Gunn diodes and injection locking at 47 GHz by a high ...
This thesis presents the design and implementation of a millimeter-wave Gunn diode oscillator operat...
A low cost and high performance Gunn X Band oscillators for educational and research purposes have b...
Subject of investigation: oscillators employing Gunn diodes for millimetric wave band. Purpose of th...
Recent advances in design and technology signifi- cantly improved the performance of low-noise InP ...
Abstract. The conventional technique of realising waveguide resonators for Gunn diode oscillators to...
The discovery in 1963, by JB Gunn, of instabilities in electronic samples of gallium arsenide has en...
Over the past decade, there have been substantial activities as well as changes in the design of hig...
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices...