Add to ORKGThe effect of Channel Hot Carrier (CHC) stress under typical analog operating conditions is studied for p-MOSFETs. Our detailed characterization results show that Single Halo devices not only show improved performance, but also are immune to CHC degradation under various operating conditions
The impact of hot-carrier (HC) stress on thin gate oxide PD SOI nMOSFETs is investigated by analyzin...
For the first time, we report a study on the hot carrier reliability performance of single halo (SH)...
Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5 nm) and H...
The effect of Channel Hot Carrier (CHC) stress under typical analog operating conditions is studied ...
Single halo p-MOSFETs with channel lengths down to 100 nm are optimized, fabricated, and characteriz...
In this paper, for the first time, we report a study on the hot carrier reliability performance of s...
The influence of HALO implantation on analog device characteristics has been studied and compared fo...
In this paper, we investigate the influence of forward and reverse body bias stress on the hot carri...
The effect of HALO dose on device parameter degradation of pMOSFET with 2.1 nm oxide and 0.135 ??m c...
Single halo (SH) and double halo (DH) metal oxide semiconductor field effect transistors (MOSFETs) h...
In this paper, we investigate the influence of forward and reverse body bias stress on the hot carri...
In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant...
In addition to its attractiveness for ultralow power applications, analog CMOS circuits based on the...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
Hot-carrier effects of p-MOSFETs with different oxide-thicknesses are studied in low gate voltage ra...
The impact of hot-carrier (HC) stress on thin gate oxide PD SOI nMOSFETs is investigated by analyzin...
For the first time, we report a study on the hot carrier reliability performance of single halo (SH)...
Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5 nm) and H...
The effect of Channel Hot Carrier (CHC) stress under typical analog operating conditions is studied ...
Single halo p-MOSFETs with channel lengths down to 100 nm are optimized, fabricated, and characteriz...
In this paper, for the first time, we report a study on the hot carrier reliability performance of s...
The influence of HALO implantation on analog device characteristics has been studied and compared fo...
In this paper, we investigate the influence of forward and reverse body bias stress on the hot carri...
The effect of HALO dose on device parameter degradation of pMOSFET with 2.1 nm oxide and 0.135 ??m c...
Single halo (SH) and double halo (DH) metal oxide semiconductor field effect transistors (MOSFETs) h...
In this paper, we investigate the influence of forward and reverse body bias stress on the hot carri...
In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant...
In addition to its attractiveness for ultralow power applications, analog CMOS circuits based on the...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
Hot-carrier effects of p-MOSFETs with different oxide-thicknesses are studied in low gate voltage ra...
The impact of hot-carrier (HC) stress on thin gate oxide PD SOI nMOSFETs is investigated by analyzin...
For the first time, we report a study on the hot carrier reliability performance of single halo (SH)...
Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5 nm) and H...