Add to ORKGWe have proposed modifications in the standard SCR structure to inherently improve quasi static triggering voltage, transient overshoot and trigger time without changing its failure threshold and holding voltage. The device is an useful option for the protection of low voltage interfaces and power domains in advanced CMOS reaching from 1 V to 3.6 V
A new silicon-controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection stru...
A High- Holding- Low- Trigger- Voltage- Silicon-Controlled- Rectifier (HHLVTSCR) is fabricated in a ...
Abstract—A novel SCR design with “initial-on ” function is proposed to achieve the lowest trigger vo...
This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low ...
Abstract—In order to enhance the applications of SCR devices for deep-submicron CMOS technology, a n...
An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized i...
This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectab...
Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-L...
A new silicon controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection stru...
In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrate...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
(DHVSCR) device is proposed and verified in a 0.25- m/2.5-V salicided CMOS process. In the DHVSCR de...
Abstract- There is a trend to revive mature technologies while including high voltage options. ESD p...
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-μm/3.3-V fully salicided...
An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized i...
A new silicon-controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection stru...
A High- Holding- Low- Trigger- Voltage- Silicon-Controlled- Rectifier (HHLVTSCR) is fabricated in a ...
Abstract—A novel SCR design with “initial-on ” function is proposed to achieve the lowest trigger vo...
This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low ...
Abstract—In order to enhance the applications of SCR devices for deep-submicron CMOS technology, a n...
An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized i...
This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectab...
Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-L...
A new silicon controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection stru...
In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrate...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
(DHVSCR) device is proposed and verified in a 0.25- m/2.5-V salicided CMOS process. In the DHVSCR de...
Abstract- There is a trend to revive mature technologies while including high voltage options. ESD p...
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-μm/3.3-V fully salicided...
An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized i...
A new silicon-controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection stru...
A High- Holding- Low- Trigger- Voltage- Silicon-Controlled- Rectifier (HHLVTSCR) is fabricated in a ...
Abstract—A novel SCR design with “initial-on ” function is proposed to achieve the lowest trigger vo...