Electrical transport and crystallization studies of glassy semiconducting Si<SUB>20</SUB>Te<SUB>80</SUB> alloy at high pressure

The effect of pressure on the electrical resistivity of bulk Si<SUB>20</SUB>Te<SUB>80</SUB> glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si<SUB>20</SUB>Te<SUB>80</SUB> glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si<SUB>20</SUB>Te<SUB>80</SUB> glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double T<SUB>g</SUB> effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed