Low-temperature Er<SUP>3+</SUP> emission in Ge-S-Ga glasses excited by host absorption
- Ivanova, Z. G.
- Aneva, Z.
- Ganesan, R.
- Tonchev, D.
- Gopal, E. S. R.
- Rao, K. S. R. K.
- Allen, T. W.
- DeCorby, R. G.
- Kasap, S.O.
DOIAbstract
The photoluminescence (PL) of a series of (GeS2)80(Ga2S3)20 glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the PL bands at ~1540, 980 and 820 nm under host excitation has been defined. A quenching effect of the host photoluminescence has been established from the compositional dependence of the PL intensity. It has been found that the present Er3+-doped Ge-S-Ga glasses posses PL lifetime values about 3.25 ms
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