In the low-frequency approximation, the magnitude of optical nonlinearities can be calculated exactly for conduction electrons from known band structure near k = 0, and approximately for the valence electrons on the basis of simple tetrahedral bonding orbitals. Reasonable agreement with experimental data has been obtained, both for second harmonic generation and for third order susceptibilities in Group IV and III-V semiconductors
The family of III-VI semiconductors MX (M = Ga, In and X = S, Se) monolayers (MLs) has recently gott...
Second-harmonic generation (SHG), linear electro-optic effect (LEO) and electric-field induced secon...
Excitonic effects in the linear optical response of semiconductors are well known and the subject of...
In the low-frequency approximation, the magnitude of optical nonlinearities can be calculated exactl...
The contribution of the valence electrons to the nonlinear optical susceptibilities may be estimated...
Heavily doped semiconductors have emerged as low-loss and tunable materials for plasmonics at mid-in...
grantor: University of TorontoWe present calculations of the linear dielectric function, t...
In the present thesis, third-order optical nonlinearities in a wide range of materials, including bu...
The third-order optical nonlinearities of Si and GaAs have been characterized throughout the near-in...
We compute from first principles the infrared dispersion of the nonlinear susceptibility χ(2) in zin...
SIGLEAvailable from British Library Document Supply Centre- DSC:D33684/81 / BLDSC - British Library ...
International audienceSecond-harmonic generation (SHG), linear electro-optic effect (LEO) and electr...
The family of III-VI semiconductors MX (M = Ga, In and X = S, Se) monolayers (MLs) has recently gott...
Second-harmonic generation (SHG), linear electro-optic effect (LEO) and electric-field induced secon...
Excitonic effects in the linear optical response of semiconductors are well known and the subject of...
In the low-frequency approximation, the magnitude of optical nonlinearities can be calculated exactl...
The contribution of the valence electrons to the nonlinear optical susceptibilities may be estimated...
Heavily doped semiconductors have emerged as low-loss and tunable materials for plasmonics at mid-in...
grantor: University of TorontoWe present calculations of the linear dielectric function, t...
In the present thesis, third-order optical nonlinearities in a wide range of materials, including bu...
The third-order optical nonlinearities of Si and GaAs have been characterized throughout the near-in...
We compute from first principles the infrared dispersion of the nonlinear susceptibility χ(2) in zin...
SIGLEAvailable from British Library Document Supply Centre- DSC:D33684/81 / BLDSC - British Library ...
International audienceSecond-harmonic generation (SHG), linear electro-optic effect (LEO) and electr...
The family of III-VI semiconductors MX (M = Ga, In and X = S, Se) monolayers (MLs) has recently gott...
Second-harmonic generation (SHG), linear electro-optic effect (LEO) and electric-field induced secon...
Excitonic effects in the linear optical response of semiconductors are well known and the subject of...