Single-crystal diffractometer studies of SiC crystals containing a high concentration of stacking faults are described. It is shown that when the faults occur in the course of a solid-state transformation, they are not disturbed randomly and the usual theories of diffraction from randomly-faulted structures cannot be applied to analyze such crystals. Depending on the mechanism of the transformation, a model for non-random faulting has to be developed to calculate the diffraction effects before comparing them with experimental values. Such an analysis provides a means of determining the mechanism of phase-transformation involved. Results of such studies performed on a heavily faulted as-grown 2H SiC crystal and another undergoing a 2H to 6H ...
This article illustrates the two different roles played by stacking faults in solid state transforma...
X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended struct...
X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended struct...
The diffraction effects predicted theoretically in the preceding two papers for 2H crystals undergoi...
Single crystals of 2H SiC transform directly into the 6H (ABCACB) structure when the transformation ...
The nature of random stacking faults in a heavily disordered single crystal of 2H SiC has been inves...
Diffraction patterns taken from cubic silicon carbide crystals partially transformed to a 6H (ABCACB...
Single crystals of 2H SiC grown by hydrogen reduction of methyltrichlorosilane at 1400°C frequently ...
Several materials with a close packed structure, like ZnS and SiC, are known to undergo solid state ...
Recent high resolution electron microscope studies of the 3C-6H transformation in SiC have shown tha...
On annealing at elevated temperatures 2H silicon carbide crystals transform to a disordered twinned ...
The 2H to 6H transformation in SiC occurring just above 1600°C has been simulated using Monte Carlo ...
X-ray diffraction patterns or beta-SiC (3C or the cubic polytype or sic) powders often exhibit an ad...
The 2H or AB structure may be transformed to 6H or ABCACB structure if deformation faults occur pref...
International audienceThe X-ray scattering of partially transformed 3C-SiC single crystals is consid...
This article illustrates the two different roles played by stacking faults in solid state transforma...
X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended struct...
X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended struct...
The diffraction effects predicted theoretically in the preceding two papers for 2H crystals undergoi...
Single crystals of 2H SiC transform directly into the 6H (ABCACB) structure when the transformation ...
The nature of random stacking faults in a heavily disordered single crystal of 2H SiC has been inves...
Diffraction patterns taken from cubic silicon carbide crystals partially transformed to a 6H (ABCACB...
Single crystals of 2H SiC grown by hydrogen reduction of methyltrichlorosilane at 1400°C frequently ...
Several materials with a close packed structure, like ZnS and SiC, are known to undergo solid state ...
Recent high resolution electron microscope studies of the 3C-6H transformation in SiC have shown tha...
On annealing at elevated temperatures 2H silicon carbide crystals transform to a disordered twinned ...
The 2H to 6H transformation in SiC occurring just above 1600°C has been simulated using Monte Carlo ...
X-ray diffraction patterns or beta-SiC (3C or the cubic polytype or sic) powders often exhibit an ad...
The 2H or AB structure may be transformed to 6H or ABCACB structure if deformation faults occur pref...
International audienceThe X-ray scattering of partially transformed 3C-SiC single crystals is consid...
This article illustrates the two different roles played by stacking faults in solid state transforma...
X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended struct...
X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended struct...