This paper describes an unusual silicon carbide crystal of special crystallographic interest. During the growth of this crystal there has occurred a change in the structure, from one region of the crystal to another, without a change of space group (P3m) or of the dimensions of the unit cell. The crystal has been identified as type 36H (Ramadell notation) and its two structures. designated as 36Ha and 36Hb, form respectively the upper and lower portions of a single crystal piece. In addition to tho usual extinctions inherent in all silicon carbide structures, the X-ray diffraction photographs of 36Hb show striking structural extinctions. In tho 10.l row the reflexions l = 6n ± 2 [n any positive or negative integer) have zero intensity; thi...
Individual hexagonal plate-shaped grains of silicon carbide are visible. The shape of these plates i...
Structural defects and degree of order of natural and synthetic moissanite have been investigated by...
A brief review of the phenomenon of polytypism is presented and its prolific abundance in Silicon Ca...
Frank's dislocation theory of the origin of polytypism received direct experimental support from the...
A 57-layered modification of silicon carbide, having rhombohedral symmetry has been discovered. It i...
A number of silicon carbide crystals, some new polytypes, have been studied. Phasecontrast microscop...
Morphological and structural details of silicon carbide type 141R are given. This polymorph, having ...
A comparative study of the calculated relative intensities of 10.l reflections for the five members ...
Mitchell has deduced the polytypic structures that would arise from theoretical screw dislocations i...
The different growth features observed on the faces of silicon-carbide (Si-C) crystals are illustrat...
Crystal structure of a large period polytype as well as some complex polytypes like 40H, 150R, and t...
The faulted matrix model of polytypism suggested in the preceding paper has been applied to the dedu...
The dislocation theory of crystal growth suggests that the crystal growing at low supersaturation in...
The crystal structure of a terrestrial 6H-SiC moissanite has been refined in the P63mc S.G. from are...
International audienceDifferent polytypes of SiC are described and predicted in literature. Here, we...
Individual hexagonal plate-shaped grains of silicon carbide are visible. The shape of these plates i...
Structural defects and degree of order of natural and synthetic moissanite have been investigated by...
A brief review of the phenomenon of polytypism is presented and its prolific abundance in Silicon Ca...
Frank's dislocation theory of the origin of polytypism received direct experimental support from the...
A 57-layered modification of silicon carbide, having rhombohedral symmetry has been discovered. It i...
A number of silicon carbide crystals, some new polytypes, have been studied. Phasecontrast microscop...
Morphological and structural details of silicon carbide type 141R are given. This polymorph, having ...
A comparative study of the calculated relative intensities of 10.l reflections for the five members ...
Mitchell has deduced the polytypic structures that would arise from theoretical screw dislocations i...
The different growth features observed on the faces of silicon-carbide (Si-C) crystals are illustrat...
Crystal structure of a large period polytype as well as some complex polytypes like 40H, 150R, and t...
The faulted matrix model of polytypism suggested in the preceding paper has been applied to the dedu...
The dislocation theory of crystal growth suggests that the crystal growing at low supersaturation in...
The crystal structure of a terrestrial 6H-SiC moissanite has been refined in the P63mc S.G. from are...
International audienceDifferent polytypes of SiC are described and predicted in literature. Here, we...
Individual hexagonal plate-shaped grains of silicon carbide are visible. The shape of these plates i...
Structural defects and degree of order of natural and synthetic moissanite have been investigated by...
A brief review of the phenomenon of polytypism is presented and its prolific abundance in Silicon Ca...