The thermomechanical behavior of passivated thin copper films is studied. Stresses in copper films of thickness ranging from 125 to 1000 nm, deposited on quartz or silicon substrates and passivated with silicon oxide, were measured using the curvature method. The thermal cycling spans a temperature range from -196 to 600° C. The measured mechanical behavior was found to be rate insensitive within the heating/cooling rate range of 5-25°C/min. It was observed that the passivated films do not exhibit a significant stress relaxation at elevated temperatures that is normally found in unpassivated films. Furthermore, a significant strain hardening during the course of thermal loading was noted. Simple continuum plasticity analyses show that the e...
Substrate curvature measurements were used to study stress changes during thermal cycling and isothe...
We investigate the elasto-plastic deformation properties of a 20-nm-thick copper (Cu) thin film. A n...
Rapid progress in the reduction of substrate thickness for silicon-based microelectronics leads to a...
The thermomechanical behavior of passivated thin copper films is studied. Stresses in copper films o...
The constitutive behavior of passivated copper films is studied. Stresses in copper films of thickne...
The temperature-dependent mechanical behavior of passivated copper films is studied. Stresses in cop...
The temperature-dependent mechanical behavior of passivated copper films is studied. Stresses in cop...
Investigations were carried out on 0.3-1 #mu#m copper films deposited by LPCVD on thermally oxidized...
A wafer curvature technique was used to measure the in-plane mechanical stresses in thin metal films...
Thin metal layers, especially those made of copper, are omnipresent in today's packaging application...
textThermal stress and mass transport are key issues for Cu metallization yield and reliability. In...
A wafer curvature technique was used to measured the in-plane mechanical stresses in thin metal film...
The material properties of OFHC copper film was investigated with the High-Speed Material Micro Test...
textThermomechanical stresses in the copper interconnects are directly related to void formation an...
AbstractThis paper presents tensile and low cycle fatigue properties of copper thin films used in el...
Substrate curvature measurements were used to study stress changes during thermal cycling and isothe...
We investigate the elasto-plastic deformation properties of a 20-nm-thick copper (Cu) thin film. A n...
Rapid progress in the reduction of substrate thickness for silicon-based microelectronics leads to a...
The thermomechanical behavior of passivated thin copper films is studied. Stresses in copper films o...
The constitutive behavior of passivated copper films is studied. Stresses in copper films of thickne...
The temperature-dependent mechanical behavior of passivated copper films is studied. Stresses in cop...
The temperature-dependent mechanical behavior of passivated copper films is studied. Stresses in cop...
Investigations were carried out on 0.3-1 #mu#m copper films deposited by LPCVD on thermally oxidized...
A wafer curvature technique was used to measure the in-plane mechanical stresses in thin metal films...
Thin metal layers, especially those made of copper, are omnipresent in today's packaging application...
textThermal stress and mass transport are key issues for Cu metallization yield and reliability. In...
A wafer curvature technique was used to measured the in-plane mechanical stresses in thin metal film...
The material properties of OFHC copper film was investigated with the High-Speed Material Micro Test...
textThermomechanical stresses in the copper interconnects are directly related to void formation an...
AbstractThis paper presents tensile and low cycle fatigue properties of copper thin films used in el...
Substrate curvature measurements were used to study stress changes during thermal cycling and isothe...
We investigate the elasto-plastic deformation properties of a 20-nm-thick copper (Cu) thin film. A n...
Rapid progress in the reduction of substrate thickness for silicon-based microelectronics leads to a...