One carrier space-charge-limited current is studied in Cr---CdS---Cr diodes or sandwiches prepared by vapour deposition technique. The ohmic contacts with CdS are made of evaporated chromium. The current voltage characteristics are measured by the slowly varying triangular pulses. The thickness of the CdS films are in the range of 0·2-0·5 μ as estimated by the weight difference method. It has been observed that at low voltages, the ohmic region is dominant whereas at higher voltages a v<SUP>3/2</SUP>/d<SUP>5/2</SUP> dependence of current is found. A theoretical relationship between the voltage and the current density is obtained assumingE<SUP>−1/2</SUP> dependence of mobility which is in agreement with the experimental results
p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor dep...
The passive state of Cr in 1 M sulphate solutions (pH 0 and 5) was studied with a combination of ele...
CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and t...
Abstract. The current (I)–voltage (V) characteristics of thermally evaporated CdSe thin films having...
Polycrystalline CdS samples on the SnO2 coated glass substrate were obtained by vacuum evaporation m...
Cadmium sulfide (CdS) thin films were prepared under vacuum onto glass slides by closed space sublim...
Field effect investigations on thin cadmium sulfide films have yielded a method of controlling the s...
Activation Energy is an important feature in determining the formation of ohmic contact on a semicon...
CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping...
The influence of oxygen on the electrical properties of CdS thin films has been studied within the u...
It is important to research the dependence of the capacitance and capacitance on the parameters on t...
It is important to research the dependence of the capacitance and capacitance on the parameters on t...
Thin films of CdSe with thicknesses of 50, 75 and 100 nm were prepared by physical vapour deposition...
The investigation of electronic quality of chemical bath deposited cadmium sulphide (CdS) layers was...
Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous s...
p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor dep...
The passive state of Cr in 1 M sulphate solutions (pH 0 and 5) was studied with a combination of ele...
CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and t...
Abstract. The current (I)–voltage (V) characteristics of thermally evaporated CdSe thin films having...
Polycrystalline CdS samples on the SnO2 coated glass substrate were obtained by vacuum evaporation m...
Cadmium sulfide (CdS) thin films were prepared under vacuum onto glass slides by closed space sublim...
Field effect investigations on thin cadmium sulfide films have yielded a method of controlling the s...
Activation Energy is an important feature in determining the formation of ohmic contact on a semicon...
CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping...
The influence of oxygen on the electrical properties of CdS thin films has been studied within the u...
It is important to research the dependence of the capacitance and capacitance on the parameters on t...
It is important to research the dependence of the capacitance and capacitance on the parameters on t...
Thin films of CdSe with thicknesses of 50, 75 and 100 nm were prepared by physical vapour deposition...
The investigation of electronic quality of chemical bath deposited cadmium sulphide (CdS) layers was...
Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous s...
p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor dep...
The passive state of Cr in 1 M sulphate solutions (pH 0 and 5) was studied with a combination of ele...
CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and t...