Growth of boron nitride thin films by metal-organic chemical vapour deposition

Boron nitride films were grown for the first time by metal-organic chemical vapour deposition from trimethyl borazine as a single-source organometallic precursor containing boron and nitrogen. Films were deposited at various substrate temperatures using ammonia as a carrier gas and were characterized by IR spectroscopy, X-ray diffraction and scanning electron microscopy; these reveal the presence of crystallites of boron nitride with an sp2- and sp3-bonded structure