In this paper we report structural and optical properties of magnesium substituted zinc oxide (Zn<SUB>1−x</SUB>Mg<SUB>x</SUB>O) nanocrystals (∼10-12 nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x=0.17 without segregation of Mg rich phase. The exact chemical composition has been established by quantitative analysis. Rietveld analysis of the X-ray diffraction (XRD) data confirms the wurtzite structure and a continuous compaction of the lattice (in particular, the c-axis parameter) as x increases. There is an enhancement of the strain in the lattice as the Mg is substituted. The band gap also gets enhanced as x is increased and reaches a value of 4 eV for x=0.17. From the...
Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were ...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
In this paper, we report the optical properties of magnesium (Mg)-substituted zinc oxide (ZnO) (Zn1−...
In the present investigation, synthesis, characterizations and the tuning of the optical band gap (E...
ZnO is emerging as one of the materials of choice for UV applications. It has a deep excitonic energ...
An emerging material for flexible UV applications is MgxZn1−xO which is capable of tunable bandgap a...
Transparent Zn1-xMgxO (x=0.01, 0.03, and 0.05) nanocrystalline films were prepared by sol-gel method...
Magnesium-doped ZnO nanoparticles (NPs) (Zn1-xMgxO-NPs, x = 0.0, 0.01, 0.03, and 0.05) were synthesi...
Pure and doped Zn1−xMgxO films were deposited onto glass substrate by ultrasonic spray pyrolysis tec...
ZnO and its ternary alloy ZnMgO offer an excellent material system with potential in applications re...
Doping impurity into ZnO is an effective and powerful technique to tailor structures and enhance its...
permits unrestricted use, distribution, and reproduction in any medium, provided the original work i...
Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were ...
Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were ...
Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were ...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
In this paper, we report the optical properties of magnesium (Mg)-substituted zinc oxide (ZnO) (Zn1−...
In the present investigation, synthesis, characterizations and the tuning of the optical band gap (E...
ZnO is emerging as one of the materials of choice for UV applications. It has a deep excitonic energ...
An emerging material for flexible UV applications is MgxZn1−xO which is capable of tunable bandgap a...
Transparent Zn1-xMgxO (x=0.01, 0.03, and 0.05) nanocrystalline films were prepared by sol-gel method...
Magnesium-doped ZnO nanoparticles (NPs) (Zn1-xMgxO-NPs, x = 0.0, 0.01, 0.03, and 0.05) were synthesi...
Pure and doped Zn1−xMgxO films were deposited onto glass substrate by ultrasonic spray pyrolysis tec...
ZnO and its ternary alloy ZnMgO offer an excellent material system with potential in applications re...
Doping impurity into ZnO is an effective and powerful technique to tailor structures and enhance its...
permits unrestricted use, distribution, and reproduction in any medium, provided the original work i...
Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were ...
Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were ...
Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were ...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...