Surface potential (SP) using Kelvin probe microscopy is employed, as a measure to sense humidity, exploiting localized nanoprotrusions of freestanding GaN microbelts. These belts with distinct nanofeatures are grown using chemical vapor deposition technique in the vapor-solid process. The variation of SP value is associated with the surface charge accumulation. Pronounced enhancement of the SP variation is found to arise from the localized inhomogeneity on the nanoprotrusions of microbelt. Role of oxygen-related native defect complexes is also discussed for the observed SP variation with humidity. Furthermore, the rough surface of belts favors a high level of defects on the surface and appears more sensitive to moisture level in atmosphere....
International audienceGaN is a widely used material for optical and power devices. However, the perf...
International audienceHerein, we show a novel technique based on Kelvin probe force microscopy (KPFM...
We report formation of aligned nanostructures on epitaxially grown polar and nonpolar GaN films via ...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Ci...
In the present study, nanotextured surface protrusion induced superhydrophobicity in GaN microbelt i...
The physicochemical processes at the surfaces of semiconductor nanostructures involved in electroche...
Sem informaçãoThe physicochemical processes at the surfaces of semiconductor nanostructures involved...
International audienceKelvin probe force microscopy (KPFM) permits to map the contact potential diff...
Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) have been use...
The generation of charged nanoparticles in the gas phase during the Chemical Vapor Deposition (CVD) ...
It remains a challenge to characterize the doping type in nanowires (NWs). We report in this paper a...
Here we have demonstrated the profound impact of surface potential on the luminescence of an array o...
The availability of reliable and quick methods to determine defect density and polarity in GaN films...
Scanning Kelvin probe microscopy (SKPM( and electrostatic force microscopy (EFM) have been employed ...
Three dimensional GaN structures with different crystal facets and doping types have been investiga...
International audienceGaN is a widely used material for optical and power devices. However, the perf...
International audienceHerein, we show a novel technique based on Kelvin probe force microscopy (KPFM...
We report formation of aligned nanostructures on epitaxially grown polar and nonpolar GaN films via ...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Ci...
In the present study, nanotextured surface protrusion induced superhydrophobicity in GaN microbelt i...
The physicochemical processes at the surfaces of semiconductor nanostructures involved in electroche...
Sem informaçãoThe physicochemical processes at the surfaces of semiconductor nanostructures involved...
International audienceKelvin probe force microscopy (KPFM) permits to map the contact potential diff...
Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) have been use...
The generation of charged nanoparticles in the gas phase during the Chemical Vapor Deposition (CVD) ...
It remains a challenge to characterize the doping type in nanowires (NWs). We report in this paper a...
Here we have demonstrated the profound impact of surface potential on the luminescence of an array o...
The availability of reliable and quick methods to determine defect density and polarity in GaN films...
Scanning Kelvin probe microscopy (SKPM( and electrostatic force microscopy (EFM) have been employed ...
Three dimensional GaN structures with different crystal facets and doping types have been investiga...
International audienceGaN is a widely used material for optical and power devices. However, the perf...
International audienceHerein, we show a novel technique based on Kelvin probe force microscopy (KPFM...
We report formation of aligned nanostructures on epitaxially grown polar and nonpolar GaN films via ...