Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz and 75–110 GHz frequency bands are described. These oscillators are simpler to construct at millimeter wavelengths compared to the conventional rectangular waveguide circuits. The effect of various circuit parameters on the oscillator frequency and output power has been experimentally studied. The CW power and mechanical tuning range obtained from the circular waveguide Gunn oscillators are found to be comparable and sometimes even better than those obtained with conventional rectangular waveguide circuits using the same Gunn device
The discovery in 1963, by JB Gunn, of instabilities in electronic samples of gallium arsenide has en...
This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...
Subject of investigation: oscillators employing Gunn diodes for millimetric wave band. Purpose of th...
Restricted Access.Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz a...
A W-band (75-110 GHz) Gunn oscillator realized with a resonant cap configuration in a circular waveg...
Restricted Access.Presented in this paper in the design and development of Millimetre-wave Gunn Osci...
A Gunn waveguide-oscillator, mechanically tunable from 60 to 70 GHz, has been developed for use as a...
Abstract. The conventional technique of realising waveguide resonators for Gunn diode oscillators to...
This thesis presents the design and implementation of a millimeter-wave Gunn diode oscillator operat...
The features of Gunn oscillators based on shielded dielectric resonators with whispering gallery mod...
Devices and circuit technologies used in millimeter-wave collision avoidance systems are discussed i...
The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensiti...
This thesis presents the results of an effort carried out at the University of Michigan directed tow...
Recent advances in design and technology signifi- cantly improved the performance of low-noise InP ...
A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The ma...
The discovery in 1963, by JB Gunn, of instabilities in electronic samples of gallium arsenide has en...
This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...
Subject of investigation: oscillators employing Gunn diodes for millimetric wave band. Purpose of th...
Restricted Access.Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz a...
A W-band (75-110 GHz) Gunn oscillator realized with a resonant cap configuration in a circular waveg...
Restricted Access.Presented in this paper in the design and development of Millimetre-wave Gunn Osci...
A Gunn waveguide-oscillator, mechanically tunable from 60 to 70 GHz, has been developed for use as a...
Abstract. The conventional technique of realising waveguide resonators for Gunn diode oscillators to...
This thesis presents the design and implementation of a millimeter-wave Gunn diode oscillator operat...
The features of Gunn oscillators based on shielded dielectric resonators with whispering gallery mod...
Devices and circuit technologies used in millimeter-wave collision avoidance systems are discussed i...
The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensiti...
This thesis presents the results of an effort carried out at the University of Michigan directed tow...
Recent advances in design and technology signifi- cantly improved the performance of low-noise InP ...
A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The ma...
The discovery in 1963, by JB Gunn, of instabilities in electronic samples of gallium arsenide has en...
This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...
Subject of investigation: oscillators employing Gunn diodes for millimetric wave band. Purpose of th...