Using the experimental set up of Sparkes1 a method of determining the effective life time of minority carriers in the base region of a transistor is presented. The excess base charges are evaluated for different collector currents and from these charges the transit times are evaluated
A means to determine the doping profile minimizing base transit time in a bipolar transistor is pres...
An unified spectral analysis method using pulsed MOS C-t characteristics has been presented in the p...
An analytical model of collector current density and base transit time valid for any injection level...
The minority carrier generation lifetime is a parameter of central importance in the characterizatio...
An accurate nondestructive method to determine the excess carrier lifetime In the collector region o...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
In this letter, the first experimental results of a recently proposed technique for measuring the c...
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is d...
The paper demonstrates an experimental way of estimating the excess minority carriers charge stored ...
Les mesures de décroissance du courant induit (E.B.I.C.) généré par un faisceau d'électrons près d'u...
International audienceIn this paper the minority carrier lifetime (tau) in the base region of an n(+...
Based on iteration method with initial low injected minority carrier profiles, analytical expression...
In this letter, the first experimental results of a recently proposed technique for measuring the ca...
The invention relates to a method for determining the actual charge carrier lifetime of a semiconduc...
This conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sand...
A means to determine the doping profile minimizing base transit time in a bipolar transistor is pres...
An unified spectral analysis method using pulsed MOS C-t characteristics has been presented in the p...
An analytical model of collector current density and base transit time valid for any injection level...
The minority carrier generation lifetime is a parameter of central importance in the characterizatio...
An accurate nondestructive method to determine the excess carrier lifetime In the collector region o...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
In this letter, the first experimental results of a recently proposed technique for measuring the c...
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is d...
The paper demonstrates an experimental way of estimating the excess minority carriers charge stored ...
Les mesures de décroissance du courant induit (E.B.I.C.) généré par un faisceau d'électrons près d'u...
International audienceIn this paper the minority carrier lifetime (tau) in the base region of an n(+...
Based on iteration method with initial low injected minority carrier profiles, analytical expression...
In this letter, the first experimental results of a recently proposed technique for measuring the ca...
The invention relates to a method for determining the actual charge carrier lifetime of a semiconduc...
This conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sand...
A means to determine the doping profile minimizing base transit time in a bipolar transistor is pres...
An unified spectral analysis method using pulsed MOS C-t characteristics has been presented in the p...
An analytical model of collector current density and base transit time valid for any injection level...