We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other sem...
Recently, group III-nitride nanowire heterostructures have been extensively investigated. Due to the...
A novel mechanism to achieve a nonambipolar tunnel FET (TFET) is proposed in this paper. The method ...
In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface are pres...
We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on...
For the development and application of GaN-based nanowire structures, it is crucial to understand th...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
Engineering: 2nd Place (The Ohio State University Edward F. Hayes Graduate Research Forum)It is diff...
International audienceWe report on the demonstration of substrate-freenanowire /polydimethylsiloxane...
Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diode...
International audienceNoncentrosymmetric one-dimensional structures are key driving forces behind ad...
International audienceCore-shell GaN/AlGaN multiple quantum wells (MQWs) embedded in a p–n junction ...
GaN-based nanowires hold great promise for solid state lighting applications because of their wavegu...
Since the early 2000s, a large class of wide bandgap nanowires can be grown with an excellent contro...
The current LED lighting technology relies on the use of a driver to convert alternating current (AC...
Noncentrosymmetric one-dimensional structures are key driving forces behind advanced nanodevices. Ow...
Recently, group III-nitride nanowire heterostructures have been extensively investigated. Due to the...
A novel mechanism to achieve a nonambipolar tunnel FET (TFET) is proposed in this paper. The method ...
In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface are pres...
We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on...
For the development and application of GaN-based nanowire structures, it is crucial to understand th...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
Engineering: 2nd Place (The Ohio State University Edward F. Hayes Graduate Research Forum)It is diff...
International audienceWe report on the demonstration of substrate-freenanowire /polydimethylsiloxane...
Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diode...
International audienceNoncentrosymmetric one-dimensional structures are key driving forces behind ad...
International audienceCore-shell GaN/AlGaN multiple quantum wells (MQWs) embedded in a p–n junction ...
GaN-based nanowires hold great promise for solid state lighting applications because of their wavegu...
Since the early 2000s, a large class of wide bandgap nanowires can be grown with an excellent contro...
The current LED lighting technology relies on the use of a driver to convert alternating current (AC...
Noncentrosymmetric one-dimensional structures are key driving forces behind advanced nanodevices. Ow...
Recently, group III-nitride nanowire heterostructures have been extensively investigated. Due to the...
A novel mechanism to achieve a nonambipolar tunnel FET (TFET) is proposed in this paper. The method ...
In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface are pres...