The drift and Hall mobilities of electrons are calculated for various degrees of impurity content incorporating the effects of deformation-potential-acoustic, piezoelectric, polar-optical and ionized-impurity scattering and the non-parabolicity of the energy band. An overall agreement with the experimental results is obtained if the acoustic deformation-potential constant is taken to be 7.2 eV
An attempt is made to study theoretically the low- and high-field longitudinal diffusivity of n-InSb...
We report measurements of the temperature and electric field dependent breakdown of the quantum Hall...
The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples o...
Available experimental values of electron mobility in InSb samples with known impurity concentration...
The electron mobility in n-InSb at 77°K is calculated by the variational method and compared with ex...
Calculations of the electron mobility of n-type InSb have been performed at different temperature re...
Electrical transport (electrical conductivity and Hall effect) studies have been performed on n-InSb...
Values of hot-electron mobility in InSb calculated by using the Monte Carlo method are presented and...
Theoretical values of weak-field Hall mobility and Hall ratio of electrons in InP at 77K and 300K ar...
The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the tem...
This Investigation was undertaken in an effort to compare the electrical properties of thin layers o...
Hole mobility and effective Hall factor for p-type GaSb were studied theoretically as a function of ...
Direct analytical calculations of the static dielectric permittivity-dependent electron mobility due...
Hot electron microwave incremental conductivity of n-InSb at 77°K in the presence of ionized impurit...
A combination of surface-sensitive techniques and electron transport measurements have been used to ...
An attempt is made to study theoretically the low- and high-field longitudinal diffusivity of n-InSb...
We report measurements of the temperature and electric field dependent breakdown of the quantum Hall...
The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples o...
Available experimental values of electron mobility in InSb samples with known impurity concentration...
The electron mobility in n-InSb at 77°K is calculated by the variational method and compared with ex...
Calculations of the electron mobility of n-type InSb have been performed at different temperature re...
Electrical transport (electrical conductivity and Hall effect) studies have been performed on n-InSb...
Values of hot-electron mobility in InSb calculated by using the Monte Carlo method are presented and...
Theoretical values of weak-field Hall mobility and Hall ratio of electrons in InP at 77K and 300K ar...
The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the tem...
This Investigation was undertaken in an effort to compare the electrical properties of thin layers o...
Hole mobility and effective Hall factor for p-type GaSb were studied theoretically as a function of ...
Direct analytical calculations of the static dielectric permittivity-dependent electron mobility due...
Hot electron microwave incremental conductivity of n-InSb at 77°K in the presence of ionized impurit...
A combination of surface-sensitive techniques and electron transport measurements have been used to ...
An attempt is made to study theoretically the low- and high-field longitudinal diffusivity of n-InSb...
We report measurements of the temperature and electric field dependent breakdown of the quantum Hall...
The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples o...