Electron mobility limited by deformation potential acoustic phonon scattering is studied for GaAs/Ga0.7Al0.3As and Ga0.47In0.53As/InP quantum wires. Values of mobility are computed for temperatures of 77, 300 and 400 K by taking into account the effects of finite barrier height, energy band non-parabolicity of the constituting materials and the non-zero values of the transverse component of the phonon wavevector. The computed values are found to be significantly lower than those obtained for bulk materials for diameters smaller than 20 nm
The low-temperature electron mobility is investigated here for electrons confined in modulation-dope...
A theory of electron mobility for a two-dimensional electron gas scattered by piezoelectric phonons ...
This paper reviews hot carrier effects in 2D polar semiconductors (quantum wells), with special emph...
The electron mobility is calculated for Ga0.5In0.5P/GaAs quantum wells at 77 K. Deformation potentia...
Alloy scattering is studied for quantum wires of Ga0.47In0.53As/InP, Ga0.47In0.53As/AI0.48In0.52As, ...
Boltzmann's equation is used to calculate the DC conductivity of electrons in a quantum well. Deform...
The authors derive an analytic expression for the imaginary part of the density response function fo...
International audienceDue to the constant size reduction, single-donor-based nanowire transistors re...
We study the effects of dielectric screening on the scattering and relaxation rates due to electron-...
96-99The carrier transport properties for two dimensional diluted Ga₍₁₋x₎MnxN have been calculated v...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.We investigate acoustic defor...
The author studies the effects of dielectric screening on scattering rates due to electron-phonon in...
Investigamos os efeitos de tamanho e do potencial de confinamento finito V0 nas taxas de espalhament...
Alloy scattering-limited mobility is calculated for narrow quantum wells of GaAs/Ga0.7Al0.3As, Ga0.4...
Using three-dimensional quantum simulations we investigate the effluence of intravalley acoustic pho...
The low-temperature electron mobility is investigated here for electrons confined in modulation-dope...
A theory of electron mobility for a two-dimensional electron gas scattered by piezoelectric phonons ...
This paper reviews hot carrier effects in 2D polar semiconductors (quantum wells), with special emph...
The electron mobility is calculated for Ga0.5In0.5P/GaAs quantum wells at 77 K. Deformation potentia...
Alloy scattering is studied for quantum wires of Ga0.47In0.53As/InP, Ga0.47In0.53As/AI0.48In0.52As, ...
Boltzmann's equation is used to calculate the DC conductivity of electrons in a quantum well. Deform...
The authors derive an analytic expression for the imaginary part of the density response function fo...
International audienceDue to the constant size reduction, single-donor-based nanowire transistors re...
We study the effects of dielectric screening on the scattering and relaxation rates due to electron-...
96-99The carrier transport properties for two dimensional diluted Ga₍₁₋x₎MnxN have been calculated v...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.We investigate acoustic defor...
The author studies the effects of dielectric screening on scattering rates due to electron-phonon in...
Investigamos os efeitos de tamanho e do potencial de confinamento finito V0 nas taxas de espalhament...
Alloy scattering-limited mobility is calculated for narrow quantum wells of GaAs/Ga0.7Al0.3As, Ga0.4...
Using three-dimensional quantum simulations we investigate the effluence of intravalley acoustic pho...
The low-temperature electron mobility is investigated here for electrons confined in modulation-dope...
A theory of electron mobility for a two-dimensional electron gas scattered by piezoelectric phonons ...
This paper reviews hot carrier effects in 2D polar semiconductors (quantum wells), with special emph...