The photo-induced shift in the optical transmission edge has been studied in obliquely deposited amorphous Se75Ge25 films. The effect of preannealing, exposure, postannealing, and film thickness on the photo-induced optical changes have been investigated. Our studies reveal that the photoeffects consist of two distinct contributions: photothermal and photo-optical. Whereas the photothermal effect decreases with angle of deposition as well as annealing, the optical effect increases rapidly with obliqueness. The nature and the respective contributions of these two processes have been established
Photo and electrochemical doping of obliquely deposited Ge-chalcogenide films have been studied by A...
Light-induced structural changes are investigated on 90 nm thick amorphous-selenium (a-Se) thin film...
Photo and electrochemical doping of obliquely deposited Ge-chalcogenide films have been studied by A...
A large photoinduced change in the chemical solubility of obliquely deposited a‐Se1−xGex films has b...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
The dependence of deposition and annealing temperature is studied of the absorption coefficient, fun...
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
Anomalously large ( ~12%) photocontraction (photoinduced change in thickness) has been observed in a...
The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)(2) c...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
Photoinduced changes in the optical properties of normal (0 ° ) and oblique (80 ° ) incide...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
The nature of the gaint photocontraction effect observed in obliquely deposited thin films of Ge-Se ...
Anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films are established...
The photoinduced surface relief grating (SRG) formation in chalcogenide GexSe1-x (0≤x\u3c0.4) thin f...
Photo and electrochemical doping of obliquely deposited Ge-chalcogenide films have been studied by A...
Light-induced structural changes are investigated on 90 nm thick amorphous-selenium (a-Se) thin film...
Photo and electrochemical doping of obliquely deposited Ge-chalcogenide films have been studied by A...
A large photoinduced change in the chemical solubility of obliquely deposited a‐Se1−xGex films has b...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
The dependence of deposition and annealing temperature is studied of the absorption coefficient, fun...
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
Anomalously large ( ~12%) photocontraction (photoinduced change in thickness) has been observed in a...
The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)(2) c...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
Photoinduced changes in the optical properties of normal (0 ° ) and oblique (80 ° ) incide...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
The nature of the gaint photocontraction effect observed in obliquely deposited thin films of Ge-Se ...
Anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films are established...
The photoinduced surface relief grating (SRG) formation in chalcogenide GexSe1-x (0≤x\u3c0.4) thin f...
Photo and electrochemical doping of obliquely deposited Ge-chalcogenide films have been studied by A...
Light-induced structural changes are investigated on 90 nm thick amorphous-selenium (a-Se) thin film...
Photo and electrochemical doping of obliquely deposited Ge-chalcogenide films have been studied by A...