Anomalously large ( ~12%) photocontraction (photoinduced change in thickness) has been observed in amorphous Se1-xGex films. The contraction depends strongly on the angle of deposition and post-deposition treatment of the films
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
461-466Transient photoconductivity has been studied in amorphous Se90Ge10-xInx thin films prepared ...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
Large photocontraction of up to 26% has been observed in some chalcogenide films. Conditions necessa...
The nature of the gaint photocontraction effect observed in obliquely deposited thin films of Ge-Se ...
A large photoinduced change in the chemical solubility of obliquely deposited a‐Se1−xGex films has b...
The photo-induced shift in the optical transmission edge has been studied in obliquely deposited amo...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
Anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films are established...
Obliquely deposited amorphous GexSe100-x thin films at several compositions in the 15%<x<33.3%...
The photoinduced surface relief grating (SRG) formation in chalcogenide GexSe1-x (0≤x\u3c0.4) thin f...
The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)(2) c...
In this Letter, we present the interesting results of photodarkening (PD), transition toward photost...
Irradiation of 80° deposited Se-Ge films with band gap photons, 8 keV electrons and 50 keV He+ ions ...
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
461-466Transient photoconductivity has been studied in amorphous Se90Ge10-xInx thin films prepared ...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
Large photocontraction of up to 26% has been observed in some chalcogenide films. Conditions necessa...
The nature of the gaint photocontraction effect observed in obliquely deposited thin films of Ge-Se ...
A large photoinduced change in the chemical solubility of obliquely deposited a‐Se1−xGex films has b...
The photo-induced shift in the optical transmission edge has been studied in obliquely deposited amo...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
Anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films are established...
Obliquely deposited amorphous GexSe100-x thin films at several compositions in the 15%<x<33.3%...
The photoinduced surface relief grating (SRG) formation in chalcogenide GexSe1-x (0≤x\u3c0.4) thin f...
The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)(2) c...
In this Letter, we present the interesting results of photodarkening (PD), transition toward photost...
Irradiation of 80° deposited Se-Ge films with band gap photons, 8 keV electrons and 50 keV He+ ions ...
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
461-466Transient photoconductivity has been studied in amorphous Se90Ge10-xInx thin films prepared ...
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