Photoinduced changes in the optical properties of normal (0 ° ) and oblique (80 ° ) incidencedeposited amorphous tetraphosphorus decaselenide (a-P4Se10) films have been investigated. The photo-induced effects are negligible in 0 °-films. Oblique deposition creates a low-density columnar microstructure which yields irreversible optical changes on illumination and annealing. Illumination of 80 °-films causes the shift of the absorption edge to longer wavelengths by 0.03 eV while annealing moves it towards shorter wavelengths by 0.06 eV. IR studies reveal the existence of three types of structural units in P4Se10 films whose relative concentrations change on exposure and on annealing. The results are supported by the observ...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light expos...
AbstractGe-As-Se chalcogenide thin films show a wide range of photosensitivity, which is utilized fo...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
The structure of the thin films of PxSe1-x deposited at various angles incidence and the photostruct...
The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light ...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
The photo-induced shift in the optical transmission edge has been studied in obliquely deposited amo...
The structure of thin films of P40-xGexSe60 glasses deposited at various angles of incidence and the...
Thin films of Sb20S40Se40 of thickness 800 nm were prepared by thermal evaporation method. The as-pr...
A microstructural mechanism of photoinduced transformations in amorphous films of arsenic selenide w...
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
In this Letter, we present the interesting results of photodarkening (PD), transition toward photost...
Changes of properties and structure of thin films of amorphous chalcogenides were disscused, a model...
The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)(2) c...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light expos...
AbstractGe-As-Se chalcogenide thin films show a wide range of photosensitivity, which is utilized fo...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
The structure of the thin films of PxSe1-x deposited at various angles incidence and the photostruct...
The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light ...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
The photo-induced shift in the optical transmission edge has been studied in obliquely deposited amo...
The structure of thin films of P40-xGexSe60 glasses deposited at various angles of incidence and the...
Thin films of Sb20S40Se40 of thickness 800 nm were prepared by thermal evaporation method. The as-pr...
A microstructural mechanism of photoinduced transformations in amorphous films of arsenic selenide w...
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
In this Letter, we present the interesting results of photodarkening (PD), transition toward photost...
Changes of properties and structure of thin films of amorphous chalcogenides were disscused, a model...
The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)(2) c...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light expos...
AbstractGe-As-Se chalcogenide thin films show a wide range of photosensitivity, which is utilized fo...