The nature of the gaint photocontraction effect observed in obliquely deposited thin films of Ge-Se has been investigated by various analytical techniques. It has been established that the observed contraction is entirely an intrinsic photooptical effect as long as the temperature during exposure does not exceed 80°C. At elevated temperatures, thermal evaporation, photooxidation and photoevaporation of selenium in the films takes place
It has been established by photoemission studies that Ge in obliquely deposited pure Ge and Ge-chalc...
We presented the unusual result of photobleaching (PB) in Ge-deficient Ge16.8Se83.2 thin films with ...
Amorphous Gex Se90-x Sb10 thin films were prepared by thermal evaporation under vacuum onto glass su...
Anomalously large ( ~12%) photocontraction (photoinduced change in thickness) has been observed in a...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
The photo-induced shift in the optical transmission edge has been studied in obliquely deposited amo...
Large photocontraction of up to 26% has been observed in some chalcogenide films. Conditions necessa...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
A large photoinduced change in the chemical solubility of obliquely deposited a‐Se1−xGex films has b...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
A new photothermal imaging process which utilizes no silver has been demonstrated in obliquely depos...
Irradiation of 80° deposited Se-Ge films with band gap photons, 8 keV electrons and 50 keV He+ ions ...
Temperature and intensity dependence of photoconductivity is studied in a-Se 90 Ge 10-x In x thin fi...
The photoinduced surface relief grating (SRG) formation in chalcogenide GexSe1-x (0≤x\u3c0.4) thin f...
It has been established by photoemission studies that Ge in obliquely deposited pure Ge and Ge-chalc...
We presented the unusual result of photobleaching (PB) in Ge-deficient Ge16.8Se83.2 thin films with ...
Amorphous Gex Se90-x Sb10 thin films were prepared by thermal evaporation under vacuum onto glass su...
Anomalously large ( ~12%) photocontraction (photoinduced change in thickness) has been observed in a...
An anomalously large decrease in thickness on photoexposure has been observed in obliquely deposited...
The photo-induced shift in the optical transmission edge has been studied in obliquely deposited amo...
Large photocontraction of up to 26% has been observed in some chalcogenide films. Conditions necessa...
The photoinduced shift in the absorption edge, changes in optical constants, film thickness contract...
A large photoinduced change in the chemical solubility of obliquely deposited a‐Se1−xGex films has b...
Amorphous Se films were prepared by thermal evaporation. The photo-darkening induced b
With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphou...
A new photothermal imaging process which utilizes no silver has been demonstrated in obliquely depos...
Irradiation of 80° deposited Se-Ge films with band gap photons, 8 keV electrons and 50 keV He+ ions ...
Temperature and intensity dependence of photoconductivity is studied in a-Se 90 Ge 10-x In x thin fi...
The photoinduced surface relief grating (SRG) formation in chalcogenide GexSe1-x (0≤x\u3c0.4) thin f...
It has been established by photoemission studies that Ge in obliquely deposited pure Ge and Ge-chalc...
We presented the unusual result of photobleaching (PB) in Ge-deficient Ge16.8Se83.2 thin films with ...
Amorphous Gex Se90-x Sb10 thin films were prepared by thermal evaporation under vacuum onto glass su...