Rapid thermally processed ferroelectric Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB> thin films
- Joshi, P. C.
- Krupanidhi, S. B.
- Mansingh , Abhai
DOIAbstract
Polycrystalline Bi4Ti3O12 thin films having perovskite structure were successfully produced on platinum coated silicon substrates by the sol-gel technique. Crack-free and crystalline films of 5000 Å thickness were fabricated by spinning and post-deposition rapid thermal annealing treatment at 500° C for 20 s. The films exhibited good structural, dielectric, and ferroelectric properties. The measured dielectric constant and loss factor at a frequency of 100 kHz were 180 and 0.014 and remanent polarization and coercive field were 5.4 µC/sq cm and 135 kV/cm, respectively. The films showed good switching endurance under bipolar stressing at least up to 10 10 cycles
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