Excimer laser ablated strontium titanate thin films for dynamic random access memory applications

Thin films of SrTiO3 were deposited on platinum coated silicon and bare silicon by excimer laser (248 nm) ablation at 400 and 500° C or ex situ crystallized. Films deposited at 500° C showed good crystallinity and were characterized for dielectric constant, dielectric loss, leakage current and C-V characteristics. The films showed a dielectric constant of 240, a dissipation factor of 0.02, a leakage current of 2×10-9 A/cm2, and a charge storage density of 42 fC/µ m2 at a bias of 5 V. The C-V behavior of both metal-insulator-metal (MIM) and metal-insulator- semiconductor (MIS) structures indicated bulk dielectric permittivity in the accumulation region and also good Si/SrTiO3 interfaces