The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure
Compressibility of ZnCr2S4 single crystals and their structure under pressure have been determined b...
Using first-principles density-functional calculations we have computed the electronic and optical p...
The lattice dynamics in the CuIr2S4 system have been investigated through Raman spectroscopy and the...
The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pre...
We have carried out the specific heat and electric resistivity measurements of the chalcogenide-spin...
We performed resistivity measurements in CuRh2S4 under quasihydrostatic pressure of up to 8.0 GPa, a...
Resistivity (ρ) and thermopower (S) of spinel-type compounds CuIr2S4 and CuIr2Se4 have been measured...
We report the results of electrical resistance measurements at high pressures on Cs2MoS4 and KTbP2Se...
The structural behaviour of Cu0.5Fe0.5Cr 2S4 has been studied experimentally and theoretically at pr...
We investigated the magnetic properties of chalcogenide-spinel superconductor CuRh₂S₄ under pressure...
We report pressure-dependent reflection and transmission measurements on ZnCr2Se4, HgCr2S4, and CdCr...
We have investigated the structural behavior of CuSbS2 and CuSbSe2 thermoelectric materials under hi...
The thiospinel CuIr2S4 exhibits a temperature-induced metal-insulator (M-I) transition around 226 K,...
The superconducting transition temperatures (Tc) of CuRh2Se4, CuRh2S4 and LiTi2O4 were all found to ...
The high-pressure behavior of monoclinic $(P2_{1}/c)\alpha$-chalcocite, $\mathrm{Cu_{2}}S$, was inve...
Compressibility of ZnCr2S4 single crystals and their structure under pressure have been determined b...
Using first-principles density-functional calculations we have computed the electronic and optical p...
The lattice dynamics in the CuIr2S4 system have been investigated through Raman spectroscopy and the...
The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pre...
We have carried out the specific heat and electric resistivity measurements of the chalcogenide-spin...
We performed resistivity measurements in CuRh2S4 under quasihydrostatic pressure of up to 8.0 GPa, a...
Resistivity (ρ) and thermopower (S) of spinel-type compounds CuIr2S4 and CuIr2Se4 have been measured...
We report the results of electrical resistance measurements at high pressures on Cs2MoS4 and KTbP2Se...
The structural behaviour of Cu0.5Fe0.5Cr 2S4 has been studied experimentally and theoretically at pr...
We investigated the magnetic properties of chalcogenide-spinel superconductor CuRh₂S₄ under pressure...
We report pressure-dependent reflection and transmission measurements on ZnCr2Se4, HgCr2S4, and CdCr...
We have investigated the structural behavior of CuSbS2 and CuSbSe2 thermoelectric materials under hi...
The thiospinel CuIr2S4 exhibits a temperature-induced metal-insulator (M-I) transition around 226 K,...
The superconducting transition temperatures (Tc) of CuRh2Se4, CuRh2S4 and LiTi2O4 were all found to ...
The high-pressure behavior of monoclinic $(P2_{1}/c)\alpha$-chalcocite, $\mathrm{Cu_{2}}S$, was inve...
Compressibility of ZnCr2S4 single crystals and their structure under pressure have been determined b...
Using first-principles density-functional calculations we have computed the electronic and optical p...
The lattice dynamics in the CuIr2S4 system have been investigated through Raman spectroscopy and the...